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Category : INTEGRATED CIRCUITS
Sub Category : Mosfets ICs
Unit Price :
25 -00/-
Model : INT00023
Bulk Price :
Quantity Price Discount
6 - 10 24.5 /- each 2% Off
11 - 100 23.75 /- each 5% Off
101 - 500 22.5 /- each 10% Off
500+ 20 /- each 20% Off
Product Type :
Availability :
Warranty : No Warranty
Min. Order Qty.(MOQ) : 1000
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Product Details

IRF9540N (Hexfet Power Mosfet)
 
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


Feature

•Advanced Process Technology
•Dynamic dv/dt Rating
•175°C Operating Temperature
•Fast Switching
•P-Channel
•Fully Avalanche Rated


70T03 - MOSFET N Channel Power Transistor

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
 
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications.
 

Feature

•Simple Drive Requirement
•Low Gate Charge
•Fast Switching
•RoHS Compliant


Specifications

•Drain-Source Volt (Vds): 100V
•Drain-Gate Volt (Vdg): 100V
•Gate-Source Volt (Vgs): 20V
•Drain Current (Id): 30A
•Power Dissipation (Ptot): 150W
•Type: N-Channel


Applications

•High Current, High Speed Switching
•Solenoid and Relay Drivers
•DC-DC & DC-AC Converter
•Automotive Environment (Injection, ABS, AIR-BAG, Lamp Drivers etc.)


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
 
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
 

Feature

•Advanced Process Technology
•Dynamic dv/dt Rating
•175°C Operating Temperature
•Fast Switching
•P-Channel
•Fully Avalanche Rated


Specification

•Drain-Source Volt (Vds): -55V
•Gate-Source Volt (Vgs): 20V
•Drain Current (Id): -19A
•Power Dissipation (Ptot): 68W
•Type: P-Channel


IRFP250N - MOSFET N Channel Power Transistor [International Rectifier]

The HEXFET technology is the key to international Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "state of the art" design achieves: very low on-state resistance combined with high transconductances; superior reverse energy and diode recovery dv/dt capability.
 
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parallelling and temperature stabilty of the electrical parameters.
 

Feature

•Isolated Central Mounting Hole
•Repetitive Avalanche Ratings
•Dynamic dv/dt Rating
•Simple Drive Requirements
•Ease of Paralleling


IRFP260N - MOSFET N Channel Power Transistor [International Rectifier]

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole
 

Feature

•Advanced Process Technology
•Dynamic dv/dt Rating
•175°C Operating Temperature
•Fast Switching
•Fully Avalanche Rated
•Ease of Paralleling
•Simple Drive Requirements


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